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Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors

Utilising dislocation-related vertical etching channels in gallium nitride, we have previously demonstrated a simple electrochemical etching (ECE) process that can create layered porous GaN structures to form distributed Bragg reflectors for visible light at wafer scale. Here, we apply the same ECE...

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Detalles Bibliográficos
Autores principales:	Griffin, Peter, Zhu, Tongtong, Oliver, Rachel
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6163959/ https://www.ncbi.nlm.nih.gov/pubmed/30134525 http://dx.doi.org/10.3390/ma11091487

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