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Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN
Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been investigated for decades, but its origin still remains controversial. In this study, ten u-GaN samples grown via metalorganic chemical vapor deposition (MOCVD) are investigated. It is observed from the roo...
Autores principales: | , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6163992/ https://www.ncbi.nlm.nih.gov/pubmed/30235861 http://dx.doi.org/10.3390/nano8090744 |