Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE). The crystalline quality, surface morphology, microstructure, and stress state of the AlGaN/A...

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Detalles Bibliográficos
Autores principales: Tasi, Chi-Tsung, Wang, Wei-Kai, Ou, Sin-Liang, Huang, Shih-Yung, Horng, Ray-Hua, Wuu, Dong-Sing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6164326/
https://www.ncbi.nlm.nih.gov/pubmed/30201865
http://dx.doi.org/10.3390/nano8090704

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6164326/
https://www.ncbi.nlm.nih.gov/pubmed/30201865
http://dx.doi.org/10.3390/nano8090704

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