Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

In this paper we report on the optical properties of a series of InGaN polar quantum well structures where the number of wells was 1, 3, 5, 7, 10 and 15 and which were grown with the inclusion of an InGaN Si-doped underlayer. When the number of quantum wells is low then the room temperature internal...

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Detalles Bibliográficos
Autores principales: Christian, George, Kappers, Menno, Massabuau, Fabien, Humphreys, Colin, Oliver, Rachel, Dawson, Philip
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6164494/
https://www.ncbi.nlm.nih.gov/pubmed/30223545
http://dx.doi.org/10.3390/ma11091736

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6164494/
https://www.ncbi.nlm.nih.gov/pubmed/30223545
http://dx.doi.org/10.3390/ma11091736

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