Steep Switching of In(0.18)Al(0.82)N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †

InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (H...

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Detalles Bibliográficos
Autores principales: Chen, Pin-Guang, Chen, Kuan-Ting, Tang, Ming, Wang, Zheng-Ying, Chou, Yu-Chen, Lee, Min-Hung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6164953/
https://www.ncbi.nlm.nih.gov/pubmed/30149580
http://dx.doi.org/10.3390/s18092795

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6164953/
https://www.ncbi.nlm.nih.gov/pubmed/30149580
http://dx.doi.org/10.3390/s18092795

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