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Enhanced Electrical Properties of Atomic Layer Deposited La(x)Al(y)O Thin Films with Stress Relieved Preoxide Pretreatment

The impact of stress relieved preoxide (SRPO) interface engineering on the physical and electrical properties of La(x)Al(y)O films was investigated. It was proved that the SRPO pretreatment has little influence on the surface morphology of La(x)Al(y)O films and the chemical bond composition of La(x)...

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Detalles Bibliográficos
Autores principales: Wang, Xing, Liu, Hongxia, Zhao, Lu, Wang, Yongte
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6165461/
https://www.ncbi.nlm.nih.gov/pubmed/30177672
http://dx.doi.org/10.3390/ma11091601
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author Wang, Xing
Liu, Hongxia
Zhao, Lu
Wang, Yongte
author_facet Wang, Xing
Liu, Hongxia
Zhao, Lu
Wang, Yongte
author_sort Wang, Xing
collection PubMed
description The impact of stress relieved preoxide (SRPO) interface engineering on the physical and electrical properties of La(x)Al(y)O films was investigated. It was proved that the SRPO pretreatment has little influence on the surface morphology of La(x)Al(y)O films and the chemical bond composition of La(x)Al(y)O/Si interface. However, the SRPO pretreated MIS capacitor displayed obvious improvement in decreasing the amount of trapped oxide charges and interfacial traps. As a result, a reduction of more than one order of magnitude in the gate leakage current density was obtained. The breakdown field strength and TDDB reliability of the La(x)Al(y)O film treated with SRPO were also enhanced.
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spelling pubmed-61654612018-10-12 Enhanced Electrical Properties of Atomic Layer Deposited La(x)Al(y)O Thin Films with Stress Relieved Preoxide Pretreatment Wang, Xing Liu, Hongxia Zhao, Lu Wang, Yongte Materials (Basel) Letter The impact of stress relieved preoxide (SRPO) interface engineering on the physical and electrical properties of La(x)Al(y)O films was investigated. It was proved that the SRPO pretreatment has little influence on the surface morphology of La(x)Al(y)O films and the chemical bond composition of La(x)Al(y)O/Si interface. However, the SRPO pretreated MIS capacitor displayed obvious improvement in decreasing the amount of trapped oxide charges and interfacial traps. As a result, a reduction of more than one order of magnitude in the gate leakage current density was obtained. The breakdown field strength and TDDB reliability of the La(x)Al(y)O film treated with SRPO were also enhanced. MDPI 2018-09-03 /pmc/articles/PMC6165461/ /pubmed/30177672 http://dx.doi.org/10.3390/ma11091601 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Letter
Wang, Xing
Liu, Hongxia
Zhao, Lu
Wang, Yongte
Enhanced Electrical Properties of Atomic Layer Deposited La(x)Al(y)O Thin Films with Stress Relieved Preoxide Pretreatment
title Enhanced Electrical Properties of Atomic Layer Deposited La(x)Al(y)O Thin Films with Stress Relieved Preoxide Pretreatment
title_full Enhanced Electrical Properties of Atomic Layer Deposited La(x)Al(y)O Thin Films with Stress Relieved Preoxide Pretreatment
title_fullStr Enhanced Electrical Properties of Atomic Layer Deposited La(x)Al(y)O Thin Films with Stress Relieved Preoxide Pretreatment
title_full_unstemmed Enhanced Electrical Properties of Atomic Layer Deposited La(x)Al(y)O Thin Films with Stress Relieved Preoxide Pretreatment
title_short Enhanced Electrical Properties of Atomic Layer Deposited La(x)Al(y)O Thin Films with Stress Relieved Preoxide Pretreatment
title_sort enhanced electrical properties of atomic layer deposited la(x)al(y)o thin films with stress relieved preoxide pretreatment
topic Letter
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6165461/
https://www.ncbi.nlm.nih.gov/pubmed/30177672
http://dx.doi.org/10.3390/ma11091601
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