Correlation between Electrical Transport and Nanoscale Strain in InAs/In(0.6)Ga(0.4)As Core–Shell Nanowires

[Image: see text] Free-standing semiconductor nanowires constitute an ideal material system for the direct manipulation of electrical and optical properties by strain engineering. In this study, we present a direct quantitative correlation between electrical conductivity and nanoscale lattice strain...

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Detalles Bibliográficos
Autores principales: Zeng, Lunjie, Gammer, Christoph, Ozdol, Burak, Nordqvist, Thomas, Nygård, Jesper, Krogstrup, Peter, Minor, Andrew M., Jäger, Wolfgang, Olsson, Eva
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6166997/
https://www.ncbi.nlm.nih.gov/pubmed/30044917
http://dx.doi.org/10.1021/acs.nanolett.8b01782

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6166997/
https://www.ncbi.nlm.nih.gov/pubmed/30044917
http://dx.doi.org/10.1021/acs.nanolett.8b01782

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