Robustness of Voltage-induced Magnetocapacitance

One of the most important achievements in the field of spintronics is the development of magnetic tunnel junctions (MTJs). MTJs exhibit a large tunneling magnetoresistance (TMR). However, TMR is strongly dependent on biasing voltage, generally, decreasing with applying bias. The rapid decay of TMR w...

Descripción completa

Detalles Bibliográficos
Autores principales: Kaiju, Hideo, Misawa, Takahiro, Nagahama, Taro, Komine, Takashi, Kitakami, Osamu, Fujioka, Masaya, Nishii, Junji, Xiao, Gang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6168469/
https://www.ncbi.nlm.nih.gov/pubmed/30279552
http://dx.doi.org/10.1038/s41598-018-33065-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6168469/
https://www.ncbi.nlm.nih.gov/pubmed/30279552
http://dx.doi.org/10.1038/s41598-018-33065-y

Ejemplares similares