Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures an...

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Detalles Bibliográficos
Autores principales: Loy, D. J. J., Dananjaya, P. A., Hong, X. L., Shum, D. P., Lew, W. S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6170501/
https://www.ncbi.nlm.nih.gov/pubmed/30283024
http://dx.doi.org/10.1038/s41598-018-33198-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6170501/
https://www.ncbi.nlm.nih.gov/pubmed/30283024
http://dx.doi.org/10.1038/s41598-018-33198-0

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