Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures an...

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Autores principales: Loy, D. J. J., Dananjaya, P. A., Hong, X. L., Shum, D. P., Lew, W. S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6170501/
https://www.ncbi.nlm.nih.gov/pubmed/30283024
http://dx.doi.org/10.1038/s41598-018-33198-0
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author Loy, D. J. J.
Dananjaya, P. A.
Hong, X. L.
Shum, D. P.
Lew, W. S.
author_facet Loy, D. J. J.
Dananjaya, P. A.
Hong, X. L.
Shum, D. P.
Lew, W. S.
author_sort Loy, D. J. J.
collection PubMed
description We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures and transmission electron microscopy (TEM) results. Retention of more than 10 years at 85 °C was obtained for both Ru/MgO/Ta and Ru/MgO/Cu RSM devices. In addition, annealing processes greatly improved the consistency of HRS and LRS switching paths from cycle to cycle, exhibiting an average ON/OFF ratio of 10(2). Further TEM studies also highlighted the difference in crystallinity between different materials in Ru/MgO/Cu RSM devices, confirming Cu filament identification which was found to be 10 nm in width.
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spelling pubmed-61705012018-10-05 Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices Loy, D. J. J. Dananjaya, P. A. Hong, X. L. Shum, D. P. Lew, W. S. Sci Rep Article We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures and transmission electron microscopy (TEM) results. Retention of more than 10 years at 85 °C was obtained for both Ru/MgO/Ta and Ru/MgO/Cu RSM devices. In addition, annealing processes greatly improved the consistency of HRS and LRS switching paths from cycle to cycle, exhibiting an average ON/OFF ratio of 10(2). Further TEM studies also highlighted the difference in crystallinity between different materials in Ru/MgO/Cu RSM devices, confirming Cu filament identification which was found to be 10 nm in width. Nature Publishing Group UK 2018-10-03 /pmc/articles/PMC6170501/ /pubmed/30283024 http://dx.doi.org/10.1038/s41598-018-33198-0 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Loy, D. J. J.
Dananjaya, P. A.
Hong, X. L.
Shum, D. P.
Lew, W. S.
Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
title Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
title_full Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
title_fullStr Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
title_full_unstemmed Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
title_short Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
title_sort conduction mechanisms on high retention annealed mgo-based resistive switching memory devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6170501/
https://www.ncbi.nlm.nih.gov/pubmed/30283024
http://dx.doi.org/10.1038/s41598-018-33198-0
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