Cargando…
Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures an...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6170501/ https://www.ncbi.nlm.nih.gov/pubmed/30283024 http://dx.doi.org/10.1038/s41598-018-33198-0 |