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Improving carrier mobility of polycrystalline Ge by Sn doping
To improve the performance of electronic devices, extensive research efforts have recently focused on the effect of incorporating Sn into Ge. In the present work, we investigate how Sn composition x (0 ≤ x ≤ 0.12) and deposition temperature T(d) (50 ≤ T(d) ≤ 200 °C) of the Ge(1−x)Sn(x) precursor aff...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6172198/ https://www.ncbi.nlm.nih.gov/pubmed/30287869 http://dx.doi.org/10.1038/s41598-018-33161-z |