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High-throughput ab initio calculations on dielectric constant and band gap of non-oxide dielectrics

High-k dielectrics, materials having a large band gap (E(g)) and high dielectric constant (k) simultaneously, constitute critical components in microelectronic devices. Because of the inverse relationship between E(g) and k, materials with large values in both properties are rare. Therefore, massive...

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Detalles Bibliográficos
Autores principales: Lee, Miso, Youn, Yong, Yim, Kanghoon, Han, Seungwu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6172237/
https://www.ncbi.nlm.nih.gov/pubmed/30287929
http://dx.doi.org/10.1038/s41598-018-33095-6