Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant [Formula: see text...

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Detalles Bibliográficos
Autores principales: Hu, Jiuning, Rigosi, Albert F., Kruskopf, Mattias, Yang, Yanfei, Wu, Bi-Yi, Tian, Jifa, Panna, Alireza R., Lee, Hsin-Yen, Payagala, Shamith U., Jones, George R., Kraft, Marlin E., Jarrett, Dean G., Watanabe, Kenji, Taniguchi, Takashi, Elmquist, Randolph E., Newell, David B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6177418/
https://www.ncbi.nlm.nih.gov/pubmed/30301948
http://dx.doi.org/10.1038/s41598-018-33466-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6177418/
https://www.ncbi.nlm.nih.gov/pubmed/30301948
http://dx.doi.org/10.1038/s41598-018-33466-z

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