Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (T(IGZO)) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irresp...

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Detalles Bibliográficos
Autores principales: Wang, Dapeng, Furuta, Mamoru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2018
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6178303/
https://www.ncbi.nlm.nih.gov/pubmed/30425903
http://dx.doi.org/10.3762/bjnano.9.239

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6178303/
https://www.ncbi.nlm.nih.gov/pubmed/30425903
http://dx.doi.org/10.3762/bjnano.9.239

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