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Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses
The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (T(IGZO)) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irresp...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6178303/ https://www.ncbi.nlm.nih.gov/pubmed/30425903 http://dx.doi.org/10.3762/bjnano.9.239 |