Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application

Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are...

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Detalles Bibliográficos
Autores principales: Zhong, Hao, Ilyas, Nasir, Song, Yuhao, Li, Wei, Jiang, Yadong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6179974/
https://www.ncbi.nlm.nih.gov/pubmed/30306413
http://dx.doi.org/10.1186/s11671-018-2741-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6179974/
https://www.ncbi.nlm.nih.gov/pubmed/30306413
http://dx.doi.org/10.1186/s11671-018-2741-9

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