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Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application
Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6179974/ https://www.ncbi.nlm.nih.gov/pubmed/30306413 http://dx.doi.org/10.1186/s11671-018-2741-9 |