Effect of Bilayer CeO(2−x)/ZnO and ZnO/CeO(2−x) Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

Memory devices with bilayer CeO(2−x)/ZnO and ZnO/CeO(2−x) heterostructures sandwiched between Ti top and Pt bottom electrodes were fabricated by RF-magnetron sputtering at room temperature. N-type semiconductor materials were used in both device heterostructures, but interestingly, change in heteros...

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Detalles Bibliográficos
Autores principales: Ismail, Muhammad, Talib, Ijaz, Rana, Anwar Manzoor, Akbar, Tahira, Jabeen, Shazia, Lee, Jinju, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6181829/
https://www.ncbi.nlm.nih.gov/pubmed/30311009
http://dx.doi.org/10.1186/s11671-018-2738-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6181829/
https://www.ncbi.nlm.nih.gov/pubmed/30311009
http://dx.doi.org/10.1186/s11671-018-2738-4

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