Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method

A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed based on the narrow band level set method for surface evolution and Monte Carlo method for flux distribution. The advanced level set method is implemented to simulate the time-related movements of etched surfa...

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Detalles Bibliográficos
Autores principales: Yu, Jia-Cheng, Zhou, Zai-Fa, Su, Jia-Le, Xia, Chang-Feng, Zhang, Xin-Wei, Wu, Zong-Ze, Huang, Qing-An
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187289/
https://www.ncbi.nlm.nih.gov/pubmed/30393350
http://dx.doi.org/10.3390/mi9020074

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187289/
https://www.ncbi.nlm.nih.gov/pubmed/30393350
http://dx.doi.org/10.3390/mi9020074

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