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Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method

A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed based on the narrow band level set method for surface evolution and Monte Carlo method for flux distribution. The advanced level set method is implemented to simulate the time-related movements of etched surfa...

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Autores principales: Yu, Jia-Cheng, Zhou, Zai-Fa, Su, Jia-Le, Xia, Chang-Feng, Zhang, Xin-Wei, Wu, Zong-Ze, Huang, Qing-An
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187289/
https://www.ncbi.nlm.nih.gov/pubmed/30393350
http://dx.doi.org/10.3390/mi9020074
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author Yu, Jia-Cheng
Zhou, Zai-Fa
Su, Jia-Le
Xia, Chang-Feng
Zhang, Xin-Wei
Wu, Zong-Ze
Huang, Qing-An
author_facet Yu, Jia-Cheng
Zhou, Zai-Fa
Su, Jia-Le
Xia, Chang-Feng
Zhang, Xin-Wei
Wu, Zong-Ze
Huang, Qing-An
author_sort Yu, Jia-Cheng
collection PubMed
description A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed based on the narrow band level set method for surface evolution and Monte Carlo method for flux distribution. The advanced level set method is implemented to simulate the time-related movements of etched surface. In the meanwhile, accelerated by ray tracing algorithm, the Monte Carlo method incorporates all dominant physical and chemical mechanisms such as ion-enhanced etching, ballistic transport, ion scattering, and sidewall passivation. The modified models of charged particles and neutral particles are epitomized to determine the contributions of etching rate. The effects such as scalloping effect and lag effect are investigated in simulations and experiments. Besides, the quantitative analyses are conducted to measure the simulation error. Finally, this simulator will be served as an accurate prediction tool for some MEMS fabrications.
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spelling pubmed-61872892018-11-01 Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method Yu, Jia-Cheng Zhou, Zai-Fa Su, Jia-Le Xia, Chang-Feng Zhang, Xin-Wei Wu, Zong-Ze Huang, Qing-An Micromachines (Basel) Article A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed based on the narrow band level set method for surface evolution and Monte Carlo method for flux distribution. The advanced level set method is implemented to simulate the time-related movements of etched surface. In the meanwhile, accelerated by ray tracing algorithm, the Monte Carlo method incorporates all dominant physical and chemical mechanisms such as ion-enhanced etching, ballistic transport, ion scattering, and sidewall passivation. The modified models of charged particles and neutral particles are epitomized to determine the contributions of etching rate. The effects such as scalloping effect and lag effect are investigated in simulations and experiments. Besides, the quantitative analyses are conducted to measure the simulation error. Finally, this simulator will be served as an accurate prediction tool for some MEMS fabrications. MDPI 2018-02-09 /pmc/articles/PMC6187289/ /pubmed/30393350 http://dx.doi.org/10.3390/mi9020074 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Yu, Jia-Cheng
Zhou, Zai-Fa
Su, Jia-Le
Xia, Chang-Feng
Zhang, Xin-Wei
Wu, Zong-Ze
Huang, Qing-An
Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method
title Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method
title_full Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method
title_fullStr Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method
title_full_unstemmed Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method
title_short Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method
title_sort three-dimensional simulation of drie process based on the narrow band level set and monte carlo method
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187289/
https://www.ncbi.nlm.nih.gov/pubmed/30393350
http://dx.doi.org/10.3390/mi9020074
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