Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application

In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleratio...

Descripción completa

Detalles Bibliográficos
Autores principales: Hu, Xiaodong, Mackowiak, Piotr, Bäuscher, Manuel, Ehrmann, Oswin, Lang, Klaus-Dieter, Schneider-Ramelow, Martin, Linke, Stefan, Ngo, Ha-Duong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187311/
https://www.ncbi.nlm.nih.gov/pubmed/30424199
http://dx.doi.org/10.3390/mi9060266

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187311/
https://www.ncbi.nlm.nih.gov/pubmed/30424199
http://dx.doi.org/10.3390/mi9060266

Ejemplares similares