Cargando…
Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application
In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleratio...
Autores principales: | , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187311/ https://www.ncbi.nlm.nih.gov/pubmed/30424199 http://dx.doi.org/10.3390/mi9060266 |
_version_ | 1783362997913124864 |
---|---|
author | Hu, Xiaodong Mackowiak, Piotr Bäuscher, Manuel Ehrmann, Oswin Lang, Klaus-Dieter Schneider-Ramelow, Martin Linke, Stefan Ngo, Ha-Duong |
author_facet | Hu, Xiaodong Mackowiak, Piotr Bäuscher, Manuel Ehrmann, Oswin Lang, Klaus-Dieter Schneider-Ramelow, Martin Linke, Stefan Ngo, Ha-Duong |
author_sort | Hu, Xiaodong |
collection | PubMed |
description | In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleration sensor is realized with one double-clamped beam carrying one transversal and one longitudinal piezoresistor on each end of the beam. The four piezoresistors are connected to a Wheatstone bridge. The piezoresistors are defined to 4400 Ω, which results in a width-to-depth geometry of the pn-junction of 14 μm × 1.8 μm. A finite element method (FEM) simulation model is used to determine the beam length, which complies with the resonance frequency and sensitivity. The geometry of the realized high-g sensor element is 3 × 2 × 1 mm(3). To demonstrate the performance of the sensor, a shock wave bar is used to test the sensor, and a Polytec vibrometer is used as an acceleration reference. The sensor wave form tracks the laser signal very well up to 60,000 g. The sensor can be utilized in aerospace applications or in the control and detection of impact levels. |
format | Online Article Text |
id | pubmed-6187311 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-61873112018-11-01 Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application Hu, Xiaodong Mackowiak, Piotr Bäuscher, Manuel Ehrmann, Oswin Lang, Klaus-Dieter Schneider-Ramelow, Martin Linke, Stefan Ngo, Ha-Duong Micromachines (Basel) Article In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleration sensor is realized with one double-clamped beam carrying one transversal and one longitudinal piezoresistor on each end of the beam. The four piezoresistors are connected to a Wheatstone bridge. The piezoresistors are defined to 4400 Ω, which results in a width-to-depth geometry of the pn-junction of 14 μm × 1.8 μm. A finite element method (FEM) simulation model is used to determine the beam length, which complies with the resonance frequency and sensitivity. The geometry of the realized high-g sensor element is 3 × 2 × 1 mm(3). To demonstrate the performance of the sensor, a shock wave bar is used to test the sensor, and a Polytec vibrometer is used as an acceleration reference. The sensor wave form tracks the laser signal very well up to 60,000 g. The sensor can be utilized in aerospace applications or in the control and detection of impact levels. MDPI 2018-05-28 /pmc/articles/PMC6187311/ /pubmed/30424199 http://dx.doi.org/10.3390/mi9060266 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Hu, Xiaodong Mackowiak, Piotr Bäuscher, Manuel Ehrmann, Oswin Lang, Klaus-Dieter Schneider-Ramelow, Martin Linke, Stefan Ngo, Ha-Duong Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application |
title | Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application |
title_full | Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application |
title_fullStr | Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application |
title_full_unstemmed | Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application |
title_short | Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application |
title_sort | design and application of a high-g piezoresistive acceleration sensor for high-impact application |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187311/ https://www.ncbi.nlm.nih.gov/pubmed/30424199 http://dx.doi.org/10.3390/mi9060266 |
work_keys_str_mv | AT huxiaodong designandapplicationofahighgpiezoresistiveaccelerationsensorforhighimpactapplication AT mackowiakpiotr designandapplicationofahighgpiezoresistiveaccelerationsensorforhighimpactapplication AT bauschermanuel designandapplicationofahighgpiezoresistiveaccelerationsensorforhighimpactapplication AT ehrmannoswin designandapplicationofahighgpiezoresistiveaccelerationsensorforhighimpactapplication AT langklausdieter designandapplicationofahighgpiezoresistiveaccelerationsensorforhighimpactapplication AT schneiderramelowmartin designandapplicationofahighgpiezoresistiveaccelerationsensorforhighimpactapplication AT linkestefan designandapplicationofahighgpiezoresistiveaccelerationsensorforhighimpactapplication AT ngohaduong designandapplicationofahighgpiezoresistiveaccelerationsensorforhighimpactapplication |