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Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application

In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleratio...

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Autores principales: Hu, Xiaodong, Mackowiak, Piotr, Bäuscher, Manuel, Ehrmann, Oswin, Lang, Klaus-Dieter, Schneider-Ramelow, Martin, Linke, Stefan, Ngo, Ha-Duong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187311/
https://www.ncbi.nlm.nih.gov/pubmed/30424199
http://dx.doi.org/10.3390/mi9060266
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author Hu, Xiaodong
Mackowiak, Piotr
Bäuscher, Manuel
Ehrmann, Oswin
Lang, Klaus-Dieter
Schneider-Ramelow, Martin
Linke, Stefan
Ngo, Ha-Duong
author_facet Hu, Xiaodong
Mackowiak, Piotr
Bäuscher, Manuel
Ehrmann, Oswin
Lang, Klaus-Dieter
Schneider-Ramelow, Martin
Linke, Stefan
Ngo, Ha-Duong
author_sort Hu, Xiaodong
collection PubMed
description In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleration sensor is realized with one double-clamped beam carrying one transversal and one longitudinal piezoresistor on each end of the beam. The four piezoresistors are connected to a Wheatstone bridge. The piezoresistors are defined to 4400 Ω, which results in a width-to-depth geometry of the pn-junction of 14 μm × 1.8 μm. A finite element method (FEM) simulation model is used to determine the beam length, which complies with the resonance frequency and sensitivity. The geometry of the realized high-g sensor element is 3 × 2 × 1 mm(3). To demonstrate the performance of the sensor, a shock wave bar is used to test the sensor, and a Polytec vibrometer is used as an acceleration reference. The sensor wave form tracks the laser signal very well up to 60,000 g. The sensor can be utilized in aerospace applications or in the control and detection of impact levels.
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spelling pubmed-61873112018-11-01 Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application Hu, Xiaodong Mackowiak, Piotr Bäuscher, Manuel Ehrmann, Oswin Lang, Klaus-Dieter Schneider-Ramelow, Martin Linke, Stefan Ngo, Ha-Duong Micromachines (Basel) Article In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleration sensor is realized with one double-clamped beam carrying one transversal and one longitudinal piezoresistor on each end of the beam. The four piezoresistors are connected to a Wheatstone bridge. The piezoresistors are defined to 4400 Ω, which results in a width-to-depth geometry of the pn-junction of 14 μm × 1.8 μm. A finite element method (FEM) simulation model is used to determine the beam length, which complies with the resonance frequency and sensitivity. The geometry of the realized high-g sensor element is 3 × 2 × 1 mm(3). To demonstrate the performance of the sensor, a shock wave bar is used to test the sensor, and a Polytec vibrometer is used as an acceleration reference. The sensor wave form tracks the laser signal very well up to 60,000 g. The sensor can be utilized in aerospace applications or in the control and detection of impact levels. MDPI 2018-05-28 /pmc/articles/PMC6187311/ /pubmed/30424199 http://dx.doi.org/10.3390/mi9060266 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Hu, Xiaodong
Mackowiak, Piotr
Bäuscher, Manuel
Ehrmann, Oswin
Lang, Klaus-Dieter
Schneider-Ramelow, Martin
Linke, Stefan
Ngo, Ha-Duong
Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application
title Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application
title_full Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application
title_fullStr Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application
title_full_unstemmed Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application
title_short Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application
title_sort design and application of a high-g piezoresistive acceleration sensor for high-impact application
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187311/
https://www.ncbi.nlm.nih.gov/pubmed/30424199
http://dx.doi.org/10.3390/mi9060266
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