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Bonding-Based Wafer-Level Vacuum Packaging Using Atomic Hydrogen Pre-Treated Cu Bonding Frames

A novel surface activation technology for Cu-Cu bonding-based wafer-level vacuum packaging using hot-wire-generated atomic hydrogen treatment was developed. Vacuum sealing temperature at 300 °C was achieved by atomic hydrogen pre-treatment for Cu native oxide reduction, while 350 °C was needed by th...

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Autores principales: Tanaka, Koki, Hirano, Hideki, Kumano, Masafumi, Froemel, Joerg, Tanaka, Shuji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187672/
https://www.ncbi.nlm.nih.gov/pubmed/30424114
http://dx.doi.org/10.3390/mi9040181
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author Tanaka, Koki
Hirano, Hideki
Kumano, Masafumi
Froemel, Joerg
Tanaka, Shuji
author_facet Tanaka, Koki
Hirano, Hideki
Kumano, Masafumi
Froemel, Joerg
Tanaka, Shuji
author_sort Tanaka, Koki
collection PubMed
description A novel surface activation technology for Cu-Cu bonding-based wafer-level vacuum packaging using hot-wire-generated atomic hydrogen treatment was developed. Vacuum sealing temperature at 300 °C was achieved by atomic hydrogen pre-treatment for Cu native oxide reduction, while 350 °C was needed by the conventional wet chemical oxide reduction procedure. A remote-type hot-wire tool was employed to minimize substrate overheating by thermal emission from the hot-wire. The maximum substrate temperature during the pre-treatment is lower than the temperature of Cu nano-grain re-crystallization, which enhances Cu atomic diffusion during the bonding process. Even after 24 h wafer storage in atmospheric conditions after atomic hydrogen irradiation, low-temperature vacuum sealing was achieved because surface hydrogen species grown by the atomic hydrogen treatment suppressed re-oxidation. Vacuum sealing yield, pressure in the sealed cavity and bonding shear strength by atomic hydrogen pre-treated Cu-Cu bonding are 90%, 5 kPa and 100 MPa, respectively, which are equivalent to conventional Cu-Cu bonding at higher temperature. Leak rate of the bonded device is less than 10(−14) Pa m(3) s(−1) order, which is applicable for practical use. The developed technology can contribute to low-temperature hermetic packaging.
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spelling pubmed-61876722018-11-01 Bonding-Based Wafer-Level Vacuum Packaging Using Atomic Hydrogen Pre-Treated Cu Bonding Frames Tanaka, Koki Hirano, Hideki Kumano, Masafumi Froemel, Joerg Tanaka, Shuji Micromachines (Basel) Article A novel surface activation technology for Cu-Cu bonding-based wafer-level vacuum packaging using hot-wire-generated atomic hydrogen treatment was developed. Vacuum sealing temperature at 300 °C was achieved by atomic hydrogen pre-treatment for Cu native oxide reduction, while 350 °C was needed by the conventional wet chemical oxide reduction procedure. A remote-type hot-wire tool was employed to minimize substrate overheating by thermal emission from the hot-wire. The maximum substrate temperature during the pre-treatment is lower than the temperature of Cu nano-grain re-crystallization, which enhances Cu atomic diffusion during the bonding process. Even after 24 h wafer storage in atmospheric conditions after atomic hydrogen irradiation, low-temperature vacuum sealing was achieved because surface hydrogen species grown by the atomic hydrogen treatment suppressed re-oxidation. Vacuum sealing yield, pressure in the sealed cavity and bonding shear strength by atomic hydrogen pre-treated Cu-Cu bonding are 90%, 5 kPa and 100 MPa, respectively, which are equivalent to conventional Cu-Cu bonding at higher temperature. Leak rate of the bonded device is less than 10(−14) Pa m(3) s(−1) order, which is applicable for practical use. The developed technology can contribute to low-temperature hermetic packaging. MDPI 2018-04-13 /pmc/articles/PMC6187672/ /pubmed/30424114 http://dx.doi.org/10.3390/mi9040181 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Tanaka, Koki
Hirano, Hideki
Kumano, Masafumi
Froemel, Joerg
Tanaka, Shuji
Bonding-Based Wafer-Level Vacuum Packaging Using Atomic Hydrogen Pre-Treated Cu Bonding Frames
title Bonding-Based Wafer-Level Vacuum Packaging Using Atomic Hydrogen Pre-Treated Cu Bonding Frames
title_full Bonding-Based Wafer-Level Vacuum Packaging Using Atomic Hydrogen Pre-Treated Cu Bonding Frames
title_fullStr Bonding-Based Wafer-Level Vacuum Packaging Using Atomic Hydrogen Pre-Treated Cu Bonding Frames
title_full_unstemmed Bonding-Based Wafer-Level Vacuum Packaging Using Atomic Hydrogen Pre-Treated Cu Bonding Frames
title_short Bonding-Based Wafer-Level Vacuum Packaging Using Atomic Hydrogen Pre-Treated Cu Bonding Frames
title_sort bonding-based wafer-level vacuum packaging using atomic hydrogen pre-treated cu bonding frames
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187672/
https://www.ncbi.nlm.nih.gov/pubmed/30424114
http://dx.doi.org/10.3390/mi9040181
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