High Temperature AlGaN/GaN Membrane Based Pressure Sensors

A highly sensitive Gallium Nitride (GaN) diaphragm based micro-scale pressure sensor with an AlGaN/GaN heterostructure field effect transistor (HFET) deflection transducer has been designed and fabricated for high temperature applications. The performance of the pressure sensor was studied over a pr...

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Detalles Bibliográficos
Autores principales: Gajula, Durga, Jahangir, Ifat, Koley, Goutam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187712/
https://www.ncbi.nlm.nih.gov/pubmed/30424140
http://dx.doi.org/10.3390/mi9050207

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187712/
https://www.ncbi.nlm.nih.gov/pubmed/30424140
http://dx.doi.org/10.3390/mi9050207

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