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Wide Acoustic Bandgap Solid Disk-Shaped Phononic Crystal Anchoring Boundaries for Enhancing Quality Factor in AlN-on-Si MEMS Resonators

This paper demonstrates the four fold enhancement in quality factor (Q) of a very high frequency (VHF) band piezoelectric Aluminum Nitride (AlN) on Silicon (Si) Lamb mode resonator by applying a unique wide acoustic bandgap (ABG) phononic crystal (PnC) at the anchoring boundaries of the resonator. T...

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Detalles Bibliográficos
Autores principales: Siddiqi, Muhammad Wajih Ullah, Lee, Joshua E.-Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187823/
https://www.ncbi.nlm.nih.gov/pubmed/30424346
http://dx.doi.org/10.3390/mi9080413
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author Siddiqi, Muhammad Wajih Ullah
Lee, Joshua E.-Y.
author_facet Siddiqi, Muhammad Wajih Ullah
Lee, Joshua E.-Y.
author_sort Siddiqi, Muhammad Wajih Ullah
collection PubMed
description This paper demonstrates the four fold enhancement in quality factor (Q) of a very high frequency (VHF) band piezoelectric Aluminum Nitride (AlN) on Silicon (Si) Lamb mode resonator by applying a unique wide acoustic bandgap (ABG) phononic crystal (PnC) at the anchoring boundaries of the resonator. The PnC unit cell topology, based on a solid disk, is characterized by a wide ABG of 120 MHz around a center frequency of 144.7 MHz from the experiments. The resulting wide ABG described in this work allows for greater enhancement in Q compared to previously reported PnC cell topologies characterized by narrower ABGs. The effect of geometrical variations to the proposed PnC cells on their corresponding ABGs are described through simulations and validated by transmission measurements of fabricated delay lines that incorporate these solid disk PnCs. Experiments demonstrate that widening the ABG associated with the PnC described herein provides for higher Q.
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spelling pubmed-61878232018-11-01 Wide Acoustic Bandgap Solid Disk-Shaped Phononic Crystal Anchoring Boundaries for Enhancing Quality Factor in AlN-on-Si MEMS Resonators Siddiqi, Muhammad Wajih Ullah Lee, Joshua E.-Y. Micromachines (Basel) Article This paper demonstrates the four fold enhancement in quality factor (Q) of a very high frequency (VHF) band piezoelectric Aluminum Nitride (AlN) on Silicon (Si) Lamb mode resonator by applying a unique wide acoustic bandgap (ABG) phononic crystal (PnC) at the anchoring boundaries of the resonator. The PnC unit cell topology, based on a solid disk, is characterized by a wide ABG of 120 MHz around a center frequency of 144.7 MHz from the experiments. The resulting wide ABG described in this work allows for greater enhancement in Q compared to previously reported PnC cell topologies characterized by narrower ABGs. The effect of geometrical variations to the proposed PnC cells on their corresponding ABGs are described through simulations and validated by transmission measurements of fabricated delay lines that incorporate these solid disk PnCs. Experiments demonstrate that widening the ABG associated with the PnC described herein provides for higher Q. MDPI 2018-08-18 /pmc/articles/PMC6187823/ /pubmed/30424346 http://dx.doi.org/10.3390/mi9080413 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Siddiqi, Muhammad Wajih Ullah
Lee, Joshua E.-Y.
Wide Acoustic Bandgap Solid Disk-Shaped Phononic Crystal Anchoring Boundaries for Enhancing Quality Factor in AlN-on-Si MEMS Resonators
title Wide Acoustic Bandgap Solid Disk-Shaped Phononic Crystal Anchoring Boundaries for Enhancing Quality Factor in AlN-on-Si MEMS Resonators
title_full Wide Acoustic Bandgap Solid Disk-Shaped Phononic Crystal Anchoring Boundaries for Enhancing Quality Factor in AlN-on-Si MEMS Resonators
title_fullStr Wide Acoustic Bandgap Solid Disk-Shaped Phononic Crystal Anchoring Boundaries for Enhancing Quality Factor in AlN-on-Si MEMS Resonators
title_full_unstemmed Wide Acoustic Bandgap Solid Disk-Shaped Phononic Crystal Anchoring Boundaries for Enhancing Quality Factor in AlN-on-Si MEMS Resonators
title_short Wide Acoustic Bandgap Solid Disk-Shaped Phononic Crystal Anchoring Boundaries for Enhancing Quality Factor in AlN-on-Si MEMS Resonators
title_sort wide acoustic bandgap solid disk-shaped phononic crystal anchoring boundaries for enhancing quality factor in aln-on-si mems resonators
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187823/
https://www.ncbi.nlm.nih.gov/pubmed/30424346
http://dx.doi.org/10.3390/mi9080413
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