Asymmetric Drain Extension Dual-kk Trigate Underlap FinFET Based on RF/Analog Circuit

Among multi-gate field effect transistor (FET) structures, FinFET has better short channel control and ease of manufacturability when compared to other conventional bulk devices. The radio frequency (RF) performance of FinFET is affected by gate-controlled parameters such as transconductance, output...

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Detalles Bibliográficos
Autores principales: Han, Ke, Qiao, Guohui, Deng, Zhongliang, Zhang, Yannan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6189701/
https://www.ncbi.nlm.nih.gov/pubmed/30400520
http://dx.doi.org/10.3390/mi8110330

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6189701/
https://www.ncbi.nlm.nih.gov/pubmed/30400520
http://dx.doi.org/10.3390/mi8110330

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