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Asymmetric Drain Extension Dual-kk Trigate Underlap FinFET Based on RF/Analog Circuit
Among multi-gate field effect transistor (FET) structures, FinFET has better short channel control and ease of manufacturability when compared to other conventional bulk devices. The radio frequency (RF) performance of FinFET is affected by gate-controlled parameters such as transconductance, output...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6189701/ https://www.ncbi.nlm.nih.gov/pubmed/30400520 http://dx.doi.org/10.3390/mi8110330 |