Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of [Formula: see text]. GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future...

Descripción completa

Detalles Bibliográficos
Autores principales: Lan, Yucheng, Li, Jianye, Wong-Ng, Winnie, Derbeshi, Rola M., Li, Jiang, Lisfi, Abdellah
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6190022/
https://www.ncbi.nlm.nih.gov/pubmed/30404319
http://dx.doi.org/10.3390/mi7090121

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6190022/
https://www.ncbi.nlm.nih.gov/pubmed/30404319
http://dx.doi.org/10.3390/mi7090121

Ejemplares similares