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CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switc...

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Detalles Bibliográficos
Autores principales: Muñoz-Gamarra, Jose Luis, Uranga, Arantxa, Barniol, Nuria
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6190103/
https://www.ncbi.nlm.nih.gov/pubmed/30407403
http://dx.doi.org/10.3390/mi7020030
Descripción
Sumario:This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good I(ON)/I(OFF) (10(3)) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm). With these dimensions, the operable Cell area of the switch will be 3.5 μm (length) × 0.2 μm (100 nm width + 100 nm gap) = 0.7 μm(2) which is the smallest reported one using a top-down fabrication approach.