Two-Layer Microstructures Fabricated by One-Step Anisotropic Wet Etching of Si in KOH Solution †

Anisotropic etching of silicon in potassium hydroxide (KOH) is an important technology in micromachining. The residue deposition from KOH etching of Si is typically regarded as a disadvantage of this technology. In this report, we make use of this residue as a second masking layer to fabricate two-l...

Descripción completa

Detalles Bibliográficos
Autores principales: Lu, Han, Zhang, Hua, Jin, Mingliang, He, Tao, Zhou, Guofu, Shui, Lingling
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6190326/
https://www.ncbi.nlm.nih.gov/pubmed/30407392
http://dx.doi.org/10.3390/mi7020019

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6190326/
https://www.ncbi.nlm.nih.gov/pubmed/30407392
http://dx.doi.org/10.3390/mi7020019

Ejemplares similares