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Two-Layer Microstructures Fabricated by One-Step Anisotropic Wet Etching of Si in KOH Solution †
Anisotropic etching of silicon in potassium hydroxide (KOH) is an important technology in micromachining. The residue deposition from KOH etching of Si is typically regarded as a disadvantage of this technology. In this report, we make use of this residue as a second masking layer to fabricate two-l...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6190326/ https://www.ncbi.nlm.nih.gov/pubmed/30407392 http://dx.doi.org/10.3390/mi7020019 |