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Controllable Vapor Growth of Large-Area Aligned CdS(x)Se(1−x) Nanowires for Visible Range Integratable Photodetectors

The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS(x)Se(1−x) nanowires via ch...

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Detalles Bibliográficos
Autores principales: Shoaib, Muhammad, Wang, Xiaoxia, Zhang, Xuehong, Zhang, Qinglin, Pan, Anlian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Berlin Heidelberg 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6199103/
https://www.ncbi.nlm.nih.gov/pubmed/30393706
http://dx.doi.org/10.1007/s40820-018-0211-7