Controllable Vapor Growth of Large-Area Aligned CdS(x)Se(1−x) Nanowires for Visible Range Integratable Photodetectors

The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS(x)Se(1−x) nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdS(x)Se(1−x) NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdS(x)Se(1−x) NWs possess smooth surface and uniform diameter. The aligned CdS(x)Se(1−x) NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdS(x)Se(1−x) NWs. These devices exhibit high performance and fast response speed with photoresponsivity ~ 670 A W(−1) and photoresponse time ~ 76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays, which exhibit promising applications in future optoelectronic integrated circuits. [Image: see text] ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1007/s40820-018-0211-7) contains supplementary material, which is available to authorized users.