Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Controlled Rectifiers

High-voltage n-channel lateral-diffused metal-oxide-semiconductor field-effect transistor (nLDMOS) components, fabricated by a TSMC 0.25-μm 60-V bipolar-CMOS-DMOS (BCD) process with drain-side embedded silicon-controlled rectifier (SCR) of the n-p-n-arranged and p-n-p-arranged types, were investigat...

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Detalles Bibliográficos
Autores principales: Chen, Shen-Li, Wu, Yi-Cih
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6210003/
https://www.ncbi.nlm.nih.gov/pubmed/30301202
http://dx.doi.org/10.3390/s18103340

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6210003/
https://www.ncbi.nlm.nih.gov/pubmed/30301202
http://dx.doi.org/10.3390/s18103340

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