Quantitative Analysis and Band Gap Determination for CIGS Absorber Layers Using Surface Techniques

Recently, Cu(In(X)Ga((1−X)))Se(2) (CIGS) absorber layers have been extensively studied by many research groups for thin-film solar cell technology. CIGS material is particularly promising due to its exceptionally high absorption coefficient and large band gap range, which is adjustable as a function...

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Detalles Bibliográficos
Autores principales: Jang, Yun Jung, Lee, Jihye, Lee, Kang-Bong, Kim, Donghwan, Lee, Yeonhee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi 2018
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6211205/
https://www.ncbi.nlm.nih.gov/pubmed/30420936
http://dx.doi.org/10.1155/2018/6751964

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6211205/
https://www.ncbi.nlm.nih.gov/pubmed/30420936
http://dx.doi.org/10.1155/2018/6751964

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