Characterisation of InGaN by Photoconductive Atomic Force Microscopy

Nanoscale structure has a large effect on the optoelectronic properties of InGaN, a material vital for energy saving technologies such as light emitting diodes. Photoconductive atomic force microscopy (PC-AFM) provides a new way to investigate this effect. In this study, PC-AFM was used to character...

Descripción completa

Detalles Bibliográficos
Autores principales: Weatherley, Thomas F. K., Massabuau, Fabien C.-P., Kappers, Menno J., Oliver, Rachel A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6212956/
https://www.ncbi.nlm.nih.gov/pubmed/30248899
http://dx.doi.org/10.3390/ma11101794

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6212956/
https://www.ncbi.nlm.nih.gov/pubmed/30248899
http://dx.doi.org/10.3390/ma11101794

Ejemplares similares