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Characterisation of InGaN by Photoconductive Atomic Force Microscopy

Nanoscale structure has a large effect on the optoelectronic properties of InGaN, a material vital for energy saving technologies such as light emitting diodes. Photoconductive atomic force microscopy (PC-AFM) provides a new way to investigate this effect. In this study, PC-AFM was used to character...

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Detalles Bibliográficos
Autores principales:	Weatherley, Thomas F. K., Massabuau, Fabien C.-P., Kappers, Menno J., Oliver, Rachel A.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6212956/ https://www.ncbi.nlm.nih.gov/pubmed/30248899 http://dx.doi.org/10.3390/ma11101794

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