Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

A new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic lapping is introduced to improve the machining performance of carbide silicon (SiC). To fulfill the method, an ultrasonic assisted machining apparatus is designed and manufactured. Comparative experiments with an...

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Detalles Bibliográficos
Autores principales: Hu, Yong, Shi, Dong, Hu, Ye, Zhao, Hongwei, Sun, Xingdong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6213398/
https://www.ncbi.nlm.nih.gov/pubmed/30340373
http://dx.doi.org/10.3390/ma11102022

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6213398/
https://www.ncbi.nlm.nih.gov/pubmed/30340373
http://dx.doi.org/10.3390/ma11102022

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