Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al(x)Ga(1−x)N Layers

We have designed and then grown a simple structure for high electron mobility transistors (HEMTs) on silicon, where as usual two transitional layers of Al(x)Ga(1−x)N (x = 0.35, x = 0.17) have been used in order to engineer the induced strain as a result of the large lattice mismatch and large therma...

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Detalles Bibliográficos
Autores principales: Cai, Yuefei, Zhu, Chenqi, Jiu, Ling, Gong, Yipin, Yu, Xiang, Bai, Jie, Esendag, Volkan, Wang, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6213469/
https://www.ncbi.nlm.nih.gov/pubmed/30322130
http://dx.doi.org/10.3390/ma11101968

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6213469/
https://www.ncbi.nlm.nih.gov/pubmed/30322130
http://dx.doi.org/10.3390/ma11101968

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