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Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al(x)Ga(1−x)N Layers
We have designed and then grown a simple structure for high electron mobility transistors (HEMTs) on silicon, where as usual two transitional layers of Al(x)Ga(1−x)N (x = 0.35, x = 0.17) have been used in order to engineer the induced strain as a result of the large lattice mismatch and large therma...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6213469/ https://www.ncbi.nlm.nih.gov/pubmed/30322130 http://dx.doi.org/10.3390/ma11101968 |