Fabrication and Optimization of High Aspect Ratio Through-Silicon-Vias Electroplating for 3D Inductor

In this study, the filling process of high aspect ratio through-silicon-vias (TSVs) under dense conditions using the electroplating method was efficiently achieved and optimized. Pulsed power was used as the experimental power source and the electroplating solution was prepared with various additive...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Haiwang, Liu, Jiasi, Xu, Tiantong, Xia, Jingchao, Tan, Xiao, Tao, Zhi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215278/
https://www.ncbi.nlm.nih.gov/pubmed/30424461
http://dx.doi.org/10.3390/mi9100528

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215278/
https://www.ncbi.nlm.nih.gov/pubmed/30424461
http://dx.doi.org/10.3390/mi9100528

Ejemplares similares