Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth

The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the overgrowth towards various crystallographic orientations. To understand the consequences of such growth geometries on the defects generation, a...

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Detalles Bibliográficos
Autores principales: Lloret, Fernando, Eon, David, Bustarret, Etienne, Araujo, Daniel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215292/
https://www.ncbi.nlm.nih.gov/pubmed/30308954
http://dx.doi.org/10.3390/nano8100814

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215292/
https://www.ncbi.nlm.nih.gov/pubmed/30308954
http://dx.doi.org/10.3390/nano8100814

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