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Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth
The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the overgrowth towards various crystallographic orientations. To understand the consequences of such growth geometries on the defects generation, a...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215292/ https://www.ncbi.nlm.nih.gov/pubmed/30308954 http://dx.doi.org/10.3390/nano8100814 |
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author | Lloret, Fernando Eon, David Bustarret, Etienne Araujo, Daniel |
author_facet | Lloret, Fernando Eon, David Bustarret, Etienne Araujo, Daniel |
author_sort | Lloret, Fernando |
collection | PubMed |
description | The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the overgrowth towards various crystallographic orientations. To understand the consequences of such growth geometries on the defects generation, a Transmission Electron Microscopy (TEM) study of overgrown, mesa-patterned, homoepitaxial, microwave-plasma-enhanced, chemical vapor deposition (MPCVD) diamond is presented. Samples have been grown under quite different conditions of doping and methane concentration in order to identify and distinguish the factors involved in the defects generation. TEM is used to reveal threading dislocations and planar defects. Sources of dislocation generation have been evidenced: (i) doping level versus growth plane, and (ii) methane concentration. The first source of dislocations was shown to generate <110> Burgers vector dislocations above a critical boron concentration, while the second induces <112> type Burgers vector above a critical methane/hydrogen molar ratio. The latter is attributed to partial dislocations whose origin is related to the dissociation of perfect ones by a Shockley process. This dissociation generated stacking faults that likely resulted in penetration twins, which were also observed on these samples. Lateral growth performed at low methane and boron content did not exhibit any dislocation. |
format | Online Article Text |
id | pubmed-6215292 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-62152922018-11-14 Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth Lloret, Fernando Eon, David Bustarret, Etienne Araujo, Daniel Nanomaterials (Basel) Article The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the overgrowth towards various crystallographic orientations. To understand the consequences of such growth geometries on the defects generation, a Transmission Electron Microscopy (TEM) study of overgrown, mesa-patterned, homoepitaxial, microwave-plasma-enhanced, chemical vapor deposition (MPCVD) diamond is presented. Samples have been grown under quite different conditions of doping and methane concentration in order to identify and distinguish the factors involved in the defects generation. TEM is used to reveal threading dislocations and planar defects. Sources of dislocation generation have been evidenced: (i) doping level versus growth plane, and (ii) methane concentration. The first source of dislocations was shown to generate <110> Burgers vector dislocations above a critical boron concentration, while the second induces <112> type Burgers vector above a critical methane/hydrogen molar ratio. The latter is attributed to partial dislocations whose origin is related to the dissociation of perfect ones by a Shockley process. This dissociation generated stacking faults that likely resulted in penetration twins, which were also observed on these samples. Lateral growth performed at low methane and boron content did not exhibit any dislocation. MDPI 2018-10-10 /pmc/articles/PMC6215292/ /pubmed/30308954 http://dx.doi.org/10.3390/nano8100814 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Lloret, Fernando Eon, David Bustarret, Etienne Araujo, Daniel Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth |
title | Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth |
title_full | Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth |
title_fullStr | Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth |
title_full_unstemmed | Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth |
title_short | Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth |
title_sort | crystalline defects induced during mpcvd lateral homoepitaxial diamond growth |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215292/ https://www.ncbi.nlm.nih.gov/pubmed/30308954 http://dx.doi.org/10.3390/nano8100814 |
work_keys_str_mv | AT lloretfernando crystallinedefectsinducedduringmpcvdlateralhomoepitaxialdiamondgrowth AT eondavid crystallinedefectsinducedduringmpcvdlateralhomoepitaxialdiamondgrowth AT bustarretetienne crystallinedefectsinducedduringmpcvdlateralhomoepitaxialdiamondgrowth AT araujodaniel crystallinedefectsinducedduringmpcvdlateralhomoepitaxialdiamondgrowth |