Micro-accelerometer Based on Vertically Movable Gate Field Effect Transistor

A vertically movable gate field effect transistor (VMGFET) is proposed and demonstrated for a micro-accelerometer application. The VMGFET using air gap as an insulator layer allows the gate to move on the substrate vertically by external forces. Finite element analysis is used to simulate mechanical...

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Detalles Bibliográficos
Autores principales: Kang, Heung Seok, Lee, Kang-Hee, Yang, Dong-Youk, You, Byoung Hee, Song, In-Hyouk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Berlin Heidelberg 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223902/
https://www.ncbi.nlm.nih.gov/pubmed/30464973
http://dx.doi.org/10.1007/s40820-015-0041-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223902/
https://www.ncbi.nlm.nih.gov/pubmed/30464973
http://dx.doi.org/10.1007/s40820-015-0041-9

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