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Micro-accelerometer Based on Vertically Movable Gate Field Effect Transistor
A vertically movable gate field effect transistor (VMGFET) is proposed and demonstrated for a micro-accelerometer application. The VMGFET using air gap as an insulator layer allows the gate to move on the substrate vertically by external forces. Finite element analysis is used to simulate mechanical...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer Berlin Heidelberg
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223902/ https://www.ncbi.nlm.nih.gov/pubmed/30464973 http://dx.doi.org/10.1007/s40820-015-0041-9 |