Advances in MoS(2)-Based Field Effect Transistors (FETs)

This paper reviews the original achievements and advances regarding the field effect transistor (FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional MoS(2). Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer MoS(2) is...

Descripción completa

Detalles Bibliográficos
Autores principales: Tong, Xin, Ashalley, Eric, Lin, Feng, Li, Handong, Wang, Zhiming M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Berlin Heidelberg 2015
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223905/
https://www.ncbi.nlm.nih.gov/pubmed/30464966
http://dx.doi.org/10.1007/s40820-015-0034-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223905/
https://www.ncbi.nlm.nih.gov/pubmed/30464966
http://dx.doi.org/10.1007/s40820-015-0034-8

Ejemplares similares