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Advances in MoS(2)-Based Field Effect Transistors (FETs)

This paper reviews the original achievements and advances regarding the field effect transistor (FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional MoS(2). Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer MoS(2) is...

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Detalles Bibliográficos
Autores principales:	Tong, Xin, Ashalley, Eric, Lin, Feng, Li, Handong, Wang, Zhiming M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer Berlin Heidelberg 2015
Materias:	Review
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223905/ https://www.ncbi.nlm.nih.gov/pubmed/30464966 http://dx.doi.org/10.1007/s40820-015-0034-8

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