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Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO(x)/TiO(x)/TiN Structure
The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrO(x)/TiO(x)/TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm. A 3-nm-thick amorphous TiO(x) with 4-nm-thick poly...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer Berlin Heidelberg
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223912/ https://www.ncbi.nlm.nih.gov/pubmed/30464987 http://dx.doi.org/10.1007/s40820-015-0055-3 |