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Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO(x)/TiO(x)/TiN Structure

The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrO(x)/TiO(x)/TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm. A 3-nm-thick amorphous TiO(x) with 4-nm-thick poly...

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Detalles Bibliográficos
Autores principales:	Jana, Debanjan, Samanta, Subhranu, Roy, Sourav, Lin, Yu Feng, Maikap, Siddheswar
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer Berlin Heidelberg 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223912/ https://www.ncbi.nlm.nih.gov/pubmed/30464987 http://dx.doi.org/10.1007/s40820-015-0055-3

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